Electrical characterisation of MNOS devices on p-type 6H-SiC

Metal-nitride-oxide semiconductor (MNOS), metal-oxide semiconductor (MOS) a nd metal-nitride semiconductor (MNS) devices have been fabricated on p-type 6H-SiC substrates without epitaxial layers. They have been characterised u sing high frequency capacitance-voltage (CV), conductance-voltage (GV) and current-voltage (IV) measurements. High frequency CV characteristics of SiC MNOS structures exhibit a capacitance-voltage behaviour that is very simil ar to high frequency CV characteristics of SiC MOS capacitors. Similar leak age current characteristics compared with p-type 6H-SiC MNS structures have been found for p-type 6H-SiC MNOS devices, but the SiO2/Si3N4 insulator cu rrent is lower, particularly for positive electric fields. (C) 1999 Elsevie r Science S.A. All rights reserved.