3C SiC(001) surface structure studied by angular resolved photoelectron spectroscopy and reflectance anisotropy spectroscopy

We present a study of the (3 x 2) and c(2 x 2) reconstructed (001) surfaces of cubic (3C) silicon carbide (SiC) using angular resolved photoelectron s pectroscopy (ARUPS) and reflectance anisotropy/difference spectroscopy (RAS /RDS). The carbon terminated c(2 x 2) structure and the (3 x 2) structure w hich is characterized by additional silicon (Si) dimers on the Si terminate d surface were prepared by annealing the sample in a Si flux. Afterwards th e geometric structures were confirmed by low energy electron diffraction. C omparing the ARUPS data of both reconstructions surface related features we re identified and their dispersion in the reciprocal space was determined. The RAS data of the (3 x 2) surface also show a strong feature which is att ributed to the sample surface. The position of the known V-2 photoemission feature of the SiC(3 x 2) surface suggests the location of the correspondin g electronic states in the ad-layer surface-dimers. This assignment is supp orted by comparing the RAS data of the SiC(3 x 2) surface to results obtain ed on silicon and gallium arsenide. (C) 1999 Elsevier Science S.A. All righ ts reserved.