Mapping of 6H-SiC for implantation control

In this paper, the problem of ion implantation control for SiC technology w ith respect to the channeling phenomenon is addressed. To obtain a good rep roducibility of the implantation process, it is necessary to control the or ientation of the ion beam with respect to the crystal axis, which for SiC, is different from the wafer axis, due to the off-arris of the crystals. Ion implantation simulation has been used, together with a mapping procedure, to investigate the beam angle effects on implant profiles and to find some optimum conditions for control and reproducibility of the process. (C) 1999 Elsevier Science S.A. All rights reserved.