Temperature behavior of the 6H-SiC pn diodes

Authors
Badila, M Chante, JP Locatelli, ML Millan, J Godignon, P Brezeanu, G Tudor, B Lebedev, A
Citation
M. Badila et al., Temperature behavior of the 6H-SiC pn diodes, DIAM RELAT, 8(2-5), 1999, pp. 341-345
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
341 - 345
Database
ISI
SICI code
0925-9635(199903)8:2-5<341:TBOT6P>2.0.ZU;2-2
Abstract
The temperature behavior of 6H-SiC pn junctions and the effect of boron com pensation are investigated. At room temperature, boron doping induces a qua si-intrinsic region, resulting in an important increase of the breakdown vo ltage. At higher temperatures the boron effect is reduced. Using optimal ex traction the temperature dependence of the saturation currents is analyzed. (C) 1999 Elsevier Science S.A. All rights reserved.