J. Pezoldt et al., Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods, DIAM RELAT, 8(2-5), 1999, pp. 346-351
Using plane-view and cross-sectional Raman spectroscopy, polarized infra-re
d spectroscopy and photothermal spectroscopy, the structure, composition an
d internal stress of 6H-SiC crystal implanted sequentially with N+ and Alions to form a (SiC)(1-x)(AlN)(x) solid solution were studied non-destructi
vely and self-consistently. The optimum implantation temperature for the sy
nthesis of a (SiC)(1-x)(AlN)(x) solid solution with a 6H structure was foun
d to be 600 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.