Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods

Citation
J. Pezoldt et al., Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods, DIAM RELAT, 8(2-5), 1999, pp. 346-351
Citations number
39
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
346 - 351
Database
ISI
SICI code
0925-9635(199903)8:2-5<346:SACCO6>2.0.ZU;2-T
Abstract
Using plane-view and cross-sectional Raman spectroscopy, polarized infra-re d spectroscopy and photothermal spectroscopy, the structure, composition an d internal stress of 6H-SiC crystal implanted sequentially with N+ and Alions to form a (SiC)(1-x)(AlN)(x) solid solution were studied non-destructi vely and self-consistently. The optimum implantation temperature for the sy nthesis of a (SiC)(1-x)(AlN)(x) solid solution with a 6H structure was foun d to be 600 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.