Electronic properties of nanocrystalline BN and AlN films deposited on Si and GaAs - a comparison

Authors
Szmidt, J Sokolowska, A Olszyna, A Werbowy, A Pawlowski, P
Citation
J. Szmidt et al., Electronic properties of nanocrystalline BN and AlN films deposited on Si and GaAs - a comparison, DIAM RELAT, 8(2-5), 1999, pp. 391-397
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
391 - 397
Database
ISI
SICI code
0925-9635(199903)8:2-5<391:EPONBA>2.0.ZU;2-I
Abstract
The dielectric and semiconducting properties of the systems formed by nanoc rystalline AIN and BN layers on Si and GaAs substrates are compared. MIS st ructures and p-n heterojunctions with good and reproducible properties were obtained. The most interesting device appears to be the AlN-GaAs system. ( C) 1999 Elsevier Science S.A. All rights reserved.