Ion implantation post-processing of amorphous carbon films

Citation
Jw. Ager et al., Ion implantation post-processing of amorphous carbon films, DIAM RELAT, 8(2-5), 1999, pp. 451-456
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
451 - 456
Database
ISI
SICI code
0925-9635(199903)8:2-5<451:IIPOAC>2.0.ZU;2-0
Abstract
Ion implantation techniques were used to improve the hardness and wear resi stance of sputtered hydrogenated amorphous carbon films and cathodic-arc no n-hydrogenated amorphous carbon films. Conventional ion implantation and pl asma immersion ion implantation and deposition techniques were used to impl ant the films with Si, Ti, Hf and W ions of mean energies in the ranges of 28-72 and 3-6 keV, respectively, and doses between 1x10(15) and 1x10(17) cm (-2). Nanohardness measurements demonstrated an increase in the apparent fi lm hardness, depending on the type, kinetic energy, and dose of implanted i ons. The effect of the ion dose on the microstructure characteristics of im planted carbon films was studied by Raman spectroscopy. Continuous sliding tests and non-contact profilometry revealed an appreciable increase in the wear resistance of the ion implanted films. Differences in the hardness of implanted films are interpreted in terms of microstructural changes caused by competing mechanisms responsible for film densification, irradiation dam age and increase of tetrahedral (sp(3)) bond configurations. It is shown th at, under certain conditions, ion implantation post-processing techniques m ay significantly improve the nanohardness and sliding wear resistance of am orphous carbon films. (C) 1999 Elsevier Science S.A. All rights reserved.