The kinetics of sputtered deposited carbon on silicon: a phenomenological model

A phenomenological model based on the rate equations for the carbon sputter deposition on Si surface is proposed. The processes of carbon adsorption, formation of SiC and transition from sp(2) to sp(3) sites induced by low en ergy ion bombardment are included. The calibration of the model was perform ed with the experimental results. The amorphous carbon films were deposited by magnetron sputtering of graphite with Ar+ ions. The energy of ions bomb arding the growing film was varied by applying a bias voltage on the substr ate. It is shown that the non-monotonous kinetics of film growth is determi ned by the variations of surface composition at different stages of growth. (C) 1999 Elsevier Science S.A. All rights reserved.