Deposition of titanium oxide and titanium carbide containing thin carbon films in a plasma activated process

The deposition of Ti containing a-C:H (amorphous hydrogenated carbon) films was achieved using a single source metal organic (MO) precursor (titanium oxide) in a plasma activated process. To obtain a constant flow of the MO p recursor, it was necessary to employ H-2 as a carrier gas. The films were d eposited onto Si substrates mounted onto the r.f. powered cathode. The film composition was determined using X-ray induced photoelectron spectroscopy ( XPS). The Ti content was in the range 17-25 at%; it strongly depends on t he self-bias potential as well as on the H-2 flow. For high H-2 flows and h igh (negative) bias potential, besides incorporated TiO2, a second Ti bindi ng state was detected due to the formation of Ti-C bonds. (C) 1999 Publishe d by Elsevier Science S.A. All rights reserved.