Effect of Si on the electronic structure of sputter-deposited C films: an electron spectroscopy study

The evolution of the electronic structure of C films is followed through th e independent measurement of their s and p partial 'density of states' (DOS ). The interest in such an approach is that the mutual relationship between the two partial DOS is a powerful indicator of the diamond-like or graphit e-like character of a given system. It is shown here by this approach that a graphite-like structure is brought about in C films by thermal treatments , while a diamond-like structure is induced by Si addition during the depos ition process. (C) 1999 Elsevier Science S.A. All rights reserved.