XPS spectra of thin CNx films prepared by chemical vapor deposition

Citation
G. Beshkov et al., XPS spectra of thin CNx films prepared by chemical vapor deposition, DIAM RELAT, 8(2-5), 1999, pp. 591-594
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
591 - 594
Database
ISI
SICI code
0925-9635(199903)8:2-5<591:XSOTCF>2.0.ZU;2-S
Abstract
Carbon nitride (CNx) thin films with an N/C ratio of 0.605:0.522 have been synthesized using different sources as a ksilol, CCl4, N-2 and NH3 by PECVD (plasma enhanced chemical vapor deposition) and hot filament-CVD reactors. X-ray photoelectron spectroscopy (XPS) analyses, which give C-1s peaks wit h a maximum at 285.7 eV and 287 eV, typical for C-N bonds and sp(2) hybridi zation and C=N bonds and sp(3) hybridization, respectively. The observed an d N-1s peaks with a maximum at about 399 eV suggest the existence of differ ent C-N bonds and polycrystallite structure in the amorphous carbide matrix . The concentration of the different CN bonds varies, depending on the depo sition technique. (C) 1999 Elsevier Science S.A. All rights reserved.