C. Lenardi et al., Properties of amorphous a-CH(: N) films synthesized by direct ion beam deposition and plasma-assisted chemical vapour deposition, DIAM RELAT, 8(2-5), 1999, pp. 595-600
Hydrogenated carbon films and hydrogenated carbon films containing nitrogen
have been synthesized by direct ion beam deposition (IBD) using cyclohexan
e and methane as precursors and by plasma-assisted chemical vapour depositi
on (PACVD) using cyclohexane and acetylene as precursors. The elemental com
position has been assessed by gas chromatography. The films' structure has
been analysed by FTIR, Raman, NEXAFS spectroscopy and X-ray reflectivity. T
he hardness has been determined by nanoindentation and microhardness measur
ements, and the stress by optical profilometry.
FTIR measurements reveal an increasing nitrile and amine group absorption w
ith a corresponding decrease of C-H stretching modes as the nitrogen concen
tration in the film increases. The nitrogen-containing functional groups ar
e proposed to be at peripheral positions of graphitic domains. The correspo
nding reduction of the domain size is detected in the Raman data, and the i
ncrease of delocalized bonding in a-CH(:N) films with respect to a-CH films
is confirmed by the NEXAFS results. In the carbon K-edge spectra, the inte
nsity of the pi* C=C resonance at similar or equal to 285.3 eV has been fou
nd to increase as a function of N content. This indicates principally an in
crement of the sp(2) hybridization. Such a structural change leads to a dec
rease in the hardness and the internal compressive stress with respect to a
-CH films. In a film containing 15 at% N, the hardness is reduced to 44% an
d the stress to 36% of that for a-CH. (C) 1999 Elsevier Science S.A. All ri
ghts reserved.