Carbon and carbon nitride planar waveguides on silicon substrates

This contribution deals with the study and realization of optical planar wa veguides on semiconductor (silicon) substrate by the method of plasma enhan ced chemical vapor deposition (PECVD). Planar waveguides are created by a c arbon layer deposited in the PECVD apparatus on a silicon oxide layer which provides optical shielding of the substrate and is prepared by oxidation o f a silicon wafer. Optical properties of the waveguides were measured by st andard prism spectroscopy at wavelength 633 nm. The attenuation of the wave guide at the best sample was 0.3 dB cm(-1). (C) 1999 Elsevier Science S.A. All rights reserved.