Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C : H

Citation
Mcm. Van De Sanden et al., Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C : H, DIAM RELAT, 8(2-5), 1999, pp. 677-681
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
677 - 681
Database
ISI
SICI code
0925-9635(199903)8:2-5<677:PCOAEA>2.0.ZU;2-5
Abstract
Mass spectrometric measurements in combination with Langmuir probe measurem ents reveal that the plasma chemistry of an expanding Ar/C2H2 is dominated by argon-ion-induced dissociation of the precursor gas. Under high are curr ent conditions complete depletion of acetylene is observed, indicating an e fficient consumption of the injected acetylene. A clear correlation between the ion fluence emanating from the are determined from modeling the mass s pectrometry results and Langmuir probe measurements is observed. First meas urements by means of cavity ring down and optical emission spectroscopy of the products of the dissociation of acetylene indicate that the dominant di ssociation channel is C2H and H. (C) 1999 Elsevier Science S.A. All rights reserved.