RHEED and AFM studies of homoepitaxial diamond thin film on C(001) substrate produced by microwave plasma CVD

Authors
Takami, T Suzuki, K Kusunoki, I Sakaguchi, I Nishitani-Gamo, M Ando, T
Citation
T. Takami et al., RHEED and AFM studies of homoepitaxial diamond thin film on C(001) substrate produced by microwave plasma CVD, DIAM RELAT, 8(2-5), 1999, pp. 701-704
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
701 - 704
Database
ISI
SICI code
0925-9635(199903)8:2-5<701:RAASOH>2.0.ZU;2-1
Abstract
A surface of a diamond thin film grown homoepitaxially on a C(001) substrat e by microwave plasma chemical vapor deposition (CVD) has been studied usin g reflection high-energy electron diffraction (RHEED) and atomic force micr oscopy (AFM). The RHEED pattern showed the C(001)2 x 1/1 x2 double-domain s tructure. The AFM images taken from the same sample in air showed 1 x 1 but locally 2 x 1 structure, which was confirmed by the Fourier transformed pa ttern of the AFM image. (C) 1999 Elsevier Science S.A. All rights reserved.