Growth of nanocrystalline diamond films for low field electron emission

Citation
Ss. Proffitt et al., Growth of nanocrystalline diamond films for low field electron emission, DIAM RELAT, 8(2-5), 1999, pp. 768-771
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
768 - 771
Database
ISI
SICI code
0925-9635(199903)8:2-5<768:GONDFF>2.0.ZU;2-T
Abstract
Nanocrystalline diamond films have been prepared using: a magnetically enha nced RF assisted plasma chemical vapour deposition (CVD) source. Such films show field emission at applied fields below 10 V mu m(-1). Similar results are obtained using methane-hydrogen and methane-nitrogen gas mixtures, sug gesting that the nitrogen promoted enhancement in field emission that has b een observed in high quality diamond films does not occur for nanocrystalli ne layers, The design of the source used is easily scaled up for large area deposition, suggesting that this could be a useful approach for the prepar ation of nanocrystalline diamond films for practical field emission purpose s. (C) 1999 Elsevier Science S.A. All rights reserved.