The field emission properties of carbon nanostructures grown in a microwave
plasma chemical vapour deposition system under bias conditions were invest
igated. Different carbon nanostructures, namely nanocrystalline diamond fil
ms (sample A) and nanotubes (sample B), were grown under conditions similar
to those employed during the bias pretreatment for diamond growth. Morphol
ogical and structural properties of the carbon nanostructures were investig
ated by scanning electron microscopy, Raman and photoelectron spectroscopy.
The field emission properties of the samples were measured by means of a f
ield emission scanning microscope using resolutions of 3 and 40 mu m, respe
ctively. The local emission follows the Fowler-Nordheim law up to 1 mA/mm(2
) (3 mA/mm(2)) for sample A (sample B). Higher currents lead for sample A t
o an improved emission behaviour, while on sample B the application of high
er currents can be detrimental in some cases. The average onset field stren
gth (measured at a current of 0.5 nA) was as low as 55 V/mu m (sample A) an
d 9 V/mu m (sample B), respectively, compared with 200 V/mu m and more for
CVD diamond films. (C) 1999 Elsevier Science S.A. All rights reserved.