Radiation-activated development of defective structure in type Ia diamond

Citation
Td. Ositinskaya et Vn. Tkach, Radiation-activated development of defective structure in type Ia diamond, DIAM RELAT, 8(2-5), 1999, pp. 897-902
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
897 - 902
Database
ISI
SICI code
0925-9635(199903)8:2-5<897:RDODSI>2.0.ZU;2-J
Abstract
A type Ia diamond crystal having nitrogen impurity in the form A, B1 and B2 centers was irradiated with 3.5 MeV electrons at successively increasing d oses of 5 x 10(16), 2 x 10(17), 4 x 10(17) and 2 x 10(18) e cm(-2) and exam ined before and after each dose using a series of methods, including positr on annihilation, EPR and optical spectroscopy in IR and visible regions. Af ter irradiation with the highest dose, a development of the visible structu re of the crystal was revealed. A detailed description of the phenomenon as well as EPR and optic studies for different irradiation doses are given. T he first results of CL studies of the as-developed structure are presented. These results include CL-topograms for different regions of the crystal as well as their appropriate CL-spectra. Possible known models of defects res ponsible for main lines in CL-spectra are considered. (C) 1999 Elsevier Sci ence S.A. All rights reserved.