Characterisation of rhenium Schottky contacts on n-type AlxGa1-xN

Authors
Zhou, L Ping, AT Boutros, K Redwing, J Adesida, I
Citation
L. Zhou et al., Characterisation of rhenium Schottky contacts on n-type AlxGa1-xN, ELECTR LETT, 35(9), 1999, pp. 745-746
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
9
Year of publication
1999
Pages
745 - 746
Database
ISI
SICI code
0013-5194(19990429)35:9<745:CORSCO>2.0.ZU;2-L
Abstract
The electrical characteristics of Re Schottky contacts on AlxGa1-xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been inves tigated. The effective barrier heights were obtained from current-voltage a nd capacitance-voltage measurements and were found to increase with alumini um concentration.