Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide

Authors
Schiz, J Ashburn, P
Citation
J. Schiz et P. Ashburn, Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide, ELECTR LETT, 35(9), 1999, pp. 752-753
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
9
Year of publication
1999
Pages
752 - 753
Database
ISI
SICI code
0013-5194(19990429)35:9<752:IBCIIP>2.0.ZU;2-G
Abstract
The fast diffusion of fluorine in polysilicon and silicon dioxide is shown to improve the base current ideality of polysilicon emitter bipolar transis tors. This behaviour is explained by the passivation of interface states at the oxide/silicon interface around the perimeter of the emitter.