Variation of pinch-off modulation with drain bias in MESFETs and HEMTs

Authors
Hutabarat, MT Webster, DR Haigh, DG
Citation
Mt. Hutabarat et al., Variation of pinch-off modulation with drain bias in MESFETs and HEMTs, ELECTR LETT, 35(9), 1999, pp. 755-756
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
9
Year of publication
1999
Pages
755 - 756
Database
ISI
SICI code
0013-5194(19990429)35:9<755:VOPMWD>2.0.ZU;2-W
Abstract
A study is presented into the variation of pinch-off modulation with drain bias in MESFETs and HEMTs by observing the gate voltage for which third-ord er distortion has a null. The results suggest that the pinch-off modulation reverses sign at low drain voltage. Not all CAD models are able to predict this effect.