Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's

Floating-body partially depleted (PD) SOI MOS-FET's exhibit excess low-freq uency noise. For the first time, the origin of the excess noise is identifi ed to be the shot noise associated with impact ionization current and body- source diode current. The shot noise, normally negligible as compared with Bicker noise, is amplified in the device through the floating-body effect ( FBE), A physically-based noise model is proposed which predicts that the, e xcess low-frequency noise shows a Lorentzian-like spectrum as verified by e xperimental data. The physical explanation is further supported by the coin cidence of the characteristic frequency in noise spectrum and ac output imp edance of the device.