The evolution of photon emission from the emitter-base junctions of bipolar
transistors during electrical aging is monitored for the first time. Both
electrical and optical characteristics are analyzed, Local variations of li
ght emission intensity are observed for junctions biased at avalanche break
down. During aging, regions of emission coalesce into small, bright regions
; the total emission for the entire junction remains stable and relatively
high. Changes in transistor current gain and breakdown voltage correlate wi
th changes in light emission, and are consistent with a hydrogen migration
model.