The fundamental 1/f noise and the hooge parameter in semiconductor quantumwires

We have calculated the Hooge parameter alpha(H) characterizing fundamental 1/f noise in a free-standing intrinsic silicon quantum wire using microscop ic noise theory. Our model takes into account quasi-one-dimensional confine ment of both phonons and electrons. We find that at low temperatures, alpha (H) can be reduced significantly by an external magnetic field which suppre sses large-angle electron scattering. This allows one to quench 1/f noise. Furthermore, a magnetic field provides a convenient tool to probe the sourc e of noise in quantum wires, and, to a certain degree, test the validity of the microscopic mobility-fluctuation quantum noise model itself.