Novel bi-directional tunneling program erase NOR (BiNOR)-type flash EEPROM

This paper presents a novel Bash memory cell, BiNOR, suitable for fast-spee d, Low-power, and high-performance application. The proposed BiNOR structur e allows random access, channel Fowler-Nordheim (FN) tunneling program/eras e in NOR-type array (In the past, channel FN tunneling program/erase can on ly be done in NAND array). Using the designated localized P-well structure, BiNOR realizes the hot hole free, low-power bi-directional channel FN tunn eling program and erase, and alleviates the oxide instability induced durin g source erase in NOR-type flash memory.