Citation
W. Chen et al., Field analysis and shape optimization for HV potentiometer, IEEE MAGNET, 35(3), 1999, pp. 1761-1764
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464
→ ACNP
Volume
35
Issue
3
Year of publication
1999
Part
1
Pages
1761 - 1764
Database
ISI
SICI code
0018-9464(199905)35:3<1761:FAASOF>2.0.ZU;2-T
Abstract
Finite Element analysis of a high-voltage potentiometer used in a Televisio
n set is presented. The net field is a result of coupling between the curre
nt fields and the electric fields. Techniques for optimization using SWIFT
non-linear programming method are developed to solve for shape of the semi-
conductive layer in the potentiometer to even out the field strength distri
butions and reduce the risk of discharge fault.