Infrared spectroscopy was used to study the 887 cm(-1) band in neutron irra
diated Czochralski-grown silicon arising in the spectra upon annealing of t
he 830 cm(-1) band of the VO defect. Our analysis showed the presence of a
884 cm(-1) shoulder in the region of the 887 cm(-1) infrared band. The 887
cm(-1) band is generally attributed to the VO2 defect formed by the capture
of a mobile VO center by an oxygen interstitial impurity. In our study the
shoulder at 884 cm(-1) is tentatively correlated with the V3O defect. Semi
empirical calculations carried out for the vibrational frequency of V3O str
ucture gave a value at 883 cm(-1) thus corroborating the latter assignment.
This new picture of the spectra in the range of the 887 cm(-1) band could
explain some so far unaccounted for experimental findings previously report
ed in literature. (C) 1999 American Institute of Physics. [S0021-8979(99)03
812-8].