Theory of the electron mobility in n-type 6H-SiC

We report on calculations of the anisotropy of the electron Hall mobility a nd its temperature dependence in n-type 6H-SiC. The model is based on the c onduction band structure determined recently by a first-principle calculati on. It provides explicit and easy to use analytical expressions for both dr ift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobi lity in 6H-SiC. (C) 1999 American Institute of Physics. [S0021-8979(99)0351 2-4].