Laser-induced modification of electron field emission from nanocrystallinediamond films

Citation
Mv. Ugarov et al., Laser-induced modification of electron field emission from nanocrystallinediamond films, J APPL PHYS, 85(12), 1999, pp. 8436-8440
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
12
Year of publication
1999
Pages
8436 - 8440
Database
ISI
SICI code
0021-8979(19990615)85:12<8436:LMOEFE>2.0.ZU;2-F
Abstract
A significant reduction of electron field emission thresholds resulting fro m ArF laser irradiation of nanocrystalline diamond films in borazine (B3N3H 6) and ammonia (NH3) atmospheres is reported. The change of emission charac teristics is not connected with either laser surface graphitization or form ation of bulk defects. X-ray photoelectron spectroscopy surface analysis an d Raman spectroscopy data from these samples show that laser irradiation re sults in the synthesis of ultrathin layers of boron-carbon-nitrogen and in B and N atoms intergrain penetration into the film to a depth above 50 Angs trom. The synthesis of the ternary B-C-N and the presence of sp(2) bonded C -N compounds is demonstrated. (C) 1999 American Institute of Physics. [S002 1-8979(99)04112-2].