1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors

We performed the 1/f noise measurements on n-channel indium antimonide (InS b) metal-oxide-semiconductor field-effect transistors (MOSFETs) biased in l inear and saturation regions operated at 77 K. Through the investigation of the dependence of drain voltage noise power spectral density on gate and d rain bias, we have estimated the oxide-semiconductor interface trap density as a function of energy. In this analysis, both the noise magnitude and th e spectral shape were studied. In this study, the frequency span was perfor med from 150 Hz to 5 kHz. The noise behavior of the device was modeled usin g the modified McWhorter Model, originally developed for silicon FETs. The interface trap concentration values computed from the low-frequency noise m easurements using the previous model were found to agree closely with InSb/ SiO2 interface properties measured by capacitance and conductance methods. (C) 1999 American Institute of Physics. [S0021-8979(99)05911-3].