Electrical measurement on a phthalocyanine Langmuir-Blodgett film: I. Comprehensive studies on the origins of scattering and drift of resistance values
Jp. Pradeau et al., Electrical measurement on a phthalocyanine Langmuir-Blodgett film: I. Comprehensive studies on the origins of scattering and drift of resistance values, J PHYS D, 32(9), 1999, pp. 961-967
The semi-conducting properties of an organic Langmuir-Blodgett (LB) film ha
ve been investigated using two configurations of LB film and electrodes. Th
e studied material is the copper tetraoctadecyltetrapyridino [3,4-b:3',4'-g
:3",4"-1:3''',4'''-q] porphyrazinium bromide (CuS18). The scattering of res
istance values appears to be dependent on the configuration. Films in the '
down' configuration (electrodes under the LB film) present resistance value
s that are less scattered but higher than the ones of films in the 'top' co
nfiguration (electrodes over the LB film). The good but less reproducible c
ontact which is observed in the 'top' configuration is certainly provided b
y the penetration of gold atoms inside the organic him. Similarly, a study
on the factors which influence the stability of organic/inorganic devices s
uggests that these factors originate from material structural evolution mai
nly near the shadow area of the electrodes.