MICROSECOND PHOTOLUMINESCENCE DECAY AND OXIDATION OF POROUS SILICON

Authors
SONG HZ QIN GG YAO DC CHEN ZJ BAO XM
Citation
Hz. Song et al., MICROSECOND PHOTOLUMINESCENCE DECAY AND OXIDATION OF POROUS SILICON, Solid state communications, 102(11), 1997, pp. 813-816
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
102
Issue
11
Year of publication
1997
Pages
813 - 816
Database
ISI
SICI code
0038-1098(1997)102:11<813:MPDAOO>2.0.ZU;2-A
Abstract
The microsecond Photoluminescence decay of as-prepared porous silicon varies from sample to sample, but atmospheric oxidation at 200 degrees C far 200 h gives rise to exactly identical exponential distribution of decay time with luminescence energy for any porous silicon sample. Discussion is made to demonstrate that we observe the characteristic p hotoluminescence decay and the related parameters for oxidized porous silicon. (C) 1997 Elsevier Science Ltd.