Self-organized growth, ripening, and optical properties of uncapped InP GaP (100) islands

Citation
K. Borgi et al., Self-organized growth, ripening, and optical properties of uncapped InP GaP (100) islands, MICROELEC J, 30(7), 1999, pp. 637-641
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
30
Issue
7
Year of publication
1999
Pages
637 - 641
Database
ISI
SICI code
0026-2692(199907)30:7<637:SGRAOP>2.0.ZU;2-J
Abstract
In this article, we study the formation of self-assembling uncapped InP isl ands grown by metal organic vapor phase epitaxy on (100) Gap. Statistical a nalysis of the AFM data for this fresh sample show three-modal distribution of vertical height InP islands with elliptical base shape. At low temperat ure, linearity of islands (wetting layer (WL)) photoluminescence (PL) integ rated emission with excitation power indicated low defect density on island (WL) interfaces. Uncapped InP islands are unstable with time, their size i ncreases as their surface density decrease and their height distribution ch ange with time. However, a broadening in PL spectra is observed as a functi on of time. This broadening can be correlated to the rearrangement versus t ime of the island height distribution as seen by AFM analysis. (C) 1999 Els evier Science Ltd. All rights reserved.