In this article, we study the formation of self-assembling uncapped InP isl
ands grown by metal organic vapor phase epitaxy on (100) Gap. Statistical a
nalysis of the AFM data for this fresh sample show three-modal distribution
of vertical height InP islands with elliptical base shape. At low temperat
ure, linearity of islands (wetting layer (WL)) photoluminescence (PL) integ
rated emission with excitation power indicated low defect density on island
(WL) interfaces. Uncapped InP islands are unstable with time, their size i
ncreases as their surface density decrease and their height distribution ch
ange with time. However, a broadening in PL spectra is observed as a functi
on of time. This broadening can be correlated to the rearrangement versus t
ime of the island height distribution as seen by AFM analysis. (C) 1999 Els
evier Science Ltd. All rights reserved.