In this work, we measure the current-voltage (I-V) and the capacitance-volt
age (C-V) characteristics of the Au/InP(100) and Au/InSb/InP(100) Schottky
type diodes. The InP(n) substrate is restructured by some monolayers of the
InSb thin film, We then propose a study of the electrical quality of the e
laborated components after the Au/InP interface creation; first without ann
ealing and then after annealing by heating at 500 degrees C temperatures. A
nalysis of the measured I(V) characteristics for the Au/InP and Au/InSb/InP
samples allows the determination of the electrical parameter variations. T
he saturation current I-s, the serial resistance R-s, the mean ideality fac
tor n and also the barrier height phi(Bn), are respectively equal to 2.10 X
10(-4) A, 19 Ohm, 1.8 and 0.401 eV for the Au/InP sample and equal to 1.34
x 10(-7) A 175 Ohm, 1.78 and 6592 eV for the Au/heated InSb/InP, Another g
ood result is that the analysis and simulation of the I(V) and the C(V) cha
racteristics allows us to determine the very important mean interfacial sta
te density N-ss(mean), and is obtained to be equal 4.23 X 10(12) eV(-1) cm(
-2) for the Au/InP sample and equal to 4.42 X 10(12) eV(-1) cm(-2) for the
Au/heated InSb/InP. This work thus permits the evolution study of these ele
ctrical parameters related to the restructuration conditions. (C) 1999 Else
vier Science Ltd. All rights reserved.