Gate oxide reliability improvement related to dry local oxidation of silicon

Authors
Bellutti, P Zorzi, N Verzellesi, G
Citation
P. Bellutti et al., Gate oxide reliability improvement related to dry local oxidation of silicon, MICROEL REL, 39(2), 1999, pp. 181-185
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
2
Year of publication
1999
Pages
181 - 185
Database
ISI
SICI code
0026-2714(199902)39:2<181:GORIRT>2.0.ZU;2-X
Abstract
Gate oxide reliability can be effectively improved by using dry field oxida tion instead of the conventional wet one. The obtained improvement is sugge sted to occur because of a better oxide quality in the active region border due to the absence of the characteristic defects induced by wet local oxid ation. (C) 1999 Elsevier Science Ltd. All rights reserved.