On positive charge annihilation and stress-induced leakage current decrease

Authors
Meinertzhagen, A Petit, C Jourdain, M Mondon, F Gogenheim, D
Citation
A. Meinertzhagen et al., On positive charge annihilation and stress-induced leakage current decrease, MICROEL REL, 39(2), 1999, pp. 191-196
Citations number
20
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
2
Year of publication
1999
Pages
191 - 196
Database
ISI
SICI code
0026-2714(199902)39:2<191:OPCAAS>2.0.ZU;2-4
Abstract
Stress-induced leakage current (SILC) has several components. One of these components increases when the oxide thickness decreases. We show that this component can be reduced by application of a low field of opposite polarity to the stress field or by temperature annealing. When a positive charge is present in the oxide, this charge is also reduced. We show that these two effects are independent. (C) 1999 Elsevier Science Ltd. All rights reserved .