ONO and NO interpoly dielectric conduction mechanisms

Authors
De Salvo, B Ghibaudo, G Pananakakis, G Reimbold, G
Citation
B. De Salvo et al., ONO and NO interpoly dielectric conduction mechanisms, MICROEL REL, 39(2), 1999, pp. 235-239
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
2
Year of publication
1999
Pages
235 - 239
Database
ISI
SICI code
0026-2714(199902)39:2<235:OANIDC>2.0.ZU;2-Z
Abstract
Interpoly stacked-dielectric conduction mechanisms are investigated. Extens ive Si3N4 and SiO2 single-layer transport analysis leads to a clear multi-l ayer dielectric understanding. An improved carrier-separation model is prop osed for a 35 Angstrom-thick SiO2 and applied to ONO results. NO electrical behavior is satisfactorily modelled under both gate polarities. (C) 1999 E lsevier Science Ltd. All rights reserved.