Dielectric and ferroelectric properties of Perovskite Pb(Zr, Ti)O-3 films deposited by sputtering on Si substrate

Lead zirconate titanate (PZT) thin films were deposited by radio-frequency (r.f.) magnetron sputtering with stoichiometric single oxide target on sili con substrates. The influence of the growth conditions (with or without sub strate heating) and the post-annealing treatments (conventional or rapid th ermal annealing) on the film properties in terms of structure and microstru cture was systematically evaluated. The electrical properties such as the d ielectric constant, the loss factor, the leakage current and the ferroelect ric properties have been characterized. (C) 1999 Elsevier Science Ltd. All rights reserved.