Dielectric characterization of ferroelectric thin films deposited on silicon

Authors
Legrand, C Haccart, T Velu, G Chambonnet, D Remiens, D Burgnies, L Mehri, F Carru, JC
Citation
C. Legrand et al., Dielectric characterization of ferroelectric thin films deposited on silicon, MICROEL REL, 39(2), 1999, pp. 251-256
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
2
Year of publication
1999
Pages
251 - 256
Database
ISI
SICI code
0026-2714(199902)39:2<251:DCOFTF>2.0.ZU;2-L
Abstract
This paper describes some experimental results concerning the dielectric ch aracterizations of PZT, PT and BT ferroelectric thin films deposited on sil icon. Firstly, the ferroelectric properties of these films are checked, not ably the high dielectric constant values. Secondly, assuming a simple elect rical model, we derive from impedance measurements the conductivity of the platinum deposited as a bottom electrode. (C) 1999 Elsevier Science Ltd. Al l rights reserved.