Plasma effects for heavy ions in implanted silicon detectors

Citation
S. Aiello et al., Plasma effects for heavy ions in implanted silicon detectors, NUCL INST A, 427(3), 1999, pp. 510-517
Citations number
12
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
427
Issue
3
Year of publication
1999
Pages
510 - 517
Database
ISI
SICI code
0168-9002(19990521)427:3<510:PEFHII>2.0.ZU;2-S
Abstract
Plasma effects for heavy ions in implanted silicon detectors have been inve stigated for different detector characteristics as a function of type and e nergy of the detected particles. A new approach is presented and used to re produce the effect of the plasma delay in the timing performances. The resu lts are in good agreement with the present data and with previous measureme nts found in the literature. (C) 1999 Published by Elsevier Science B.V. Al l rights reserved.