Poly (2-trimethylsilyl-2-propyl methacrylate-co-gamma-butyrolactone-2-yl methacrylate) for ArF lithography

Poly(2-trimethylsilyl-2-propyl methacrylate-co-gamma-butyrolactone-2-yl met hacrylate) was synthesized and evaluated as a chemically amplified resist f or ArF lithography. The polymer has excellent transmittance at 248 nm and a lso has a good transmittance at 193 nm. in addition, the polymer possesses good thermal stability up to 200 degrees C, whereas in the presence of an a cid the cleavage of the 2-trimethylsilyl-2-propyl eater group begins at abo ut 80 degrees C in a catalytic manner. Patterns of 0.24 mu m line/space wer e obtained with a conventional developer, 2.38 wt.% tetramethylammonium hyd roxide aqueous solution, using an ArF excimer laser exposure system. (C) 19 99 Elsevier Science Ltd. All rights reserved.