Nonstationary photocurrent in a Bi12SiO20 crystal grown in an argon atmosphere

Citation
Ma. Bryushinin et Ia. Sokolov, Nonstationary photocurrent in a Bi12SiO20 crystal grown in an argon atmosphere, TECH PHYS L, 25(5), 1999, pp. 366-368
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
5
Year of publication
1999
Pages
366 - 368
Database
ISI
SICI code
1063-7850(199905)25:5<366:NPIABC>2.0.ZU;2-N
Abstract
A detailed investigation of the nonstationary photocurrent in crystals with a sillenite structure grown in an oxygen-free (argon) atmosphere is perfor med. Basic parameters of the photoinduced charge carriers in the crystals i nvestigated, such as the mean carrier lifetime and mobility, the mean photo conductivity, the carrier diffusion length, and the Debye screening length, are determined. (C) 1999 American Institute of Physics. [S1063-7850(99)012 05-7].