Photoluminescence properties of erbium-doped single-crystal and porous silicon films

Authors
Orlov, LK Ivin, SV Shengurov, DV Shteinman, EA
Citation
Lk. Orlov et al., Photoluminescence properties of erbium-doped single-crystal and porous silicon films, TECH PHYS L, 25(5), 1999, pp. 393-394
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
5
Year of publication
1999
Pages
393 - 394
Database
ISI
SICI code
1063-7850(199905)25:5<393:PPOESA>2.0.ZU;2-N
Abstract
The features of the photoluminescence spectra of single-crystal and porous Si:Er films grown by molecular beam epitaxy are discussed. (C) 1999 America n Institute of Physics. [S1063-7850(99)02205-3].