EFFECT OF DOPING ON GA1-XALXAS STRUCTURAL-PROPERTIES

Authors
BAKMISIUK J DOMAGALA J PASZKOWICZ W TRELA J ZYTKIEWICZ ZR LESZCZYNSKI M REGINSKI K MUSZALSKI J HARTWIG J OHLER M
Citation
J. Bakmisiuk et al., EFFECT OF DOPING ON GA1-XALXAS STRUCTURAL-PROPERTIES, Acta Physica Polonica. A, 91(5), 1997, pp. 911-915
Citations number
11
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
91
Issue
5
Year of publication
1997
Pages
911 - 915
Database
ISI
SICI code
0587-4246(1997)91:5<911:EODOGS>2.0.ZU;2-L
Abstract
The microstructure of Ga1-xAlxAs layers was studied using methods of h igh resolution diffractometry and topography. Mapping out the reciproc al space in the vicinity of 004 reciprocal lattice points shows a diff erence in diffuse scattering between doped and undoped layers. This re sult is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was fo und that the thermal expansion coefficients for the doped layers are h igher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.