STRUCTURAL PERFECTION OF CZOCHRALSKI-GROWN SILICON-CRYSTALS ANNEALED ABOVE 1500-K UNDER HYDROSTATIC-PRESSURE

Authors
DATSENKO L KHRUPA V KRASULYA S MISIUK A HARTWIG J SURMA B
Citation
L. Datsenko et al., STRUCTURAL PERFECTION OF CZOCHRALSKI-GROWN SILICON-CRYSTALS ANNEALED ABOVE 1500-K UNDER HYDROSTATIC-PRESSURE, Acta Physica Polonica. A, 91(5), 1997, pp. 929-933
Citations number
4
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
91
Issue
5
Year of publication
1997
Pages
929 - 933
Database
ISI
SICI code
0587-4246(1997)91:5<929:SPOCSA>2.0.ZU;2-N
Abstract
The structural perfection of Czochralski grown silicon crystals anneal ed at 1580-1620 It under hydrostatic pressure up to 10(9) Pa was inves tigated by X-ray diffractometry and topography supplemented by the met hod of absorption of infrared rays. Such treatment suppresses dissolut ion of oxygen-related defects. From the static Debye-Waller factor dep endence on the reflection order it was concluded that large clusters o r dislocation loops are the dominant type of defects for most of the s amples.