X-RAY CHARACTERIZATION OF GAAS-ZN GAS-TRANSPORT GROWN WHISKERS USING CONVENTIONAL AND SYNCHROTRON SOURCES

GaAs:Zn whiskers grown by the gas-transport method are characterized b y diffraction methods using white and monochromatic radiation. The met hods applied include the white-beam topography at ESRF synchrotron sou rce and Laue patterns, 4-circle Bond diffractometry and high-resolutio n diffractometry at conventional X-ray sources. The results obtained c oncern the growth morphology and defect structure. It is found that Ga As:Zn whiskers grown by the described method have the form of long nee dles and blades of the morphologies represented by growth direction an d largest lateral face [112]{111} and [111]{112}, respectively, with a single exception of a blade of uncommon morphology [111]{110}.