Temperature dependence of InGaAs GaAs quantum well microcavity light-emitting diodes

We report a systematic investigation of the emission properties of semicond uctor microcavity light-emitting diodes (MC-LEDs) with different cavity det uning. Evidence that varying the cavity detuning leads to temperature insen sitive output characteristics is provided by changes in the temperature dep endence of the slope efficiency extracted from the light output versus curr ent characteristics. For resonantly tuned devices the slope efficiency decr eases monotonically with increasing temperature. However when the cavity pe ak is detuned to long wavelength with respect to the room temperature quant um well (QW) emission, temperature insensitive characteristics are achieved . Compared to a noncavity type LED, enhanced efficiency and narrow spectral linewidth have been observed for the MC-LEDs with the highest output effic iency achieved when the QW emission and cavity peak are exact resonant. (c) 1999 American Institute of Physics. [S0003-6951(99)00224-7].