Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

The effect of dopant-type, antimony (Sb), arsenic (As), and boron (B), on t he outdiffusion of oxygen in heavily doped Czochralski (Cz) silicon wafers has been investigated using secondary ion mass spectroscopy. The results in dicate that, although oxygen diffusion in Cz silicon is retarded in heavily B- and As-doped wafers during low temperature annealing (800 degrees C), i t is not influenced by heavy Sb doping. This indicates that charge effects and atom size effects have negligible influence on the diffusion of oxygen. The B and As diffusion retardation effect is attributed to the existence o f dopant-oxygen complexes. The oxygen solubility was largest in the most he avily B-doped samples annealed at low temperature. (c) 1999 American Instit ute of Physics. [S0003-6951(99)04624-0].