B cluster formation and dissolution in Si: A scenario based on atomistic modeling

A comprehensive model of the nucleation, growth, and dissolution of B clust ers in Si is presented. We analyze the activation of B in implanted Si on t he basis of detailed interactions between B and defects in Si. In the model , the nucleation of B clusters requires a high interstitial supersaturation , which occurs in the damaged region during implantation and at the early s tages of the postimplant anneal. B clusters grow by adding interstitial B t o preexisting B clusters, resulting in B complexes with a high interstitial content. As the annealing proceeds and the Si interstitial supersaturation decreases, the B clusters emit Si interstitials, leaving small stable B co mplexes with low interstitial content. The total dissolution of B clusters involves thermally generated Si interstitials, and it is only achieved at v ery high temperatures or long anneal times. (c) 1999 American Institute of Physics. [S0003-6951(99)00524-0].