ZnSe GaAs interface state probed by time-resolved reflectance difference spectroscopy

Authors
Wong, KS Wang, H Yang, Z Sou, IK Wong, GKL
Citation
Ks. Wong et al., ZnSe GaAs interface state probed by time-resolved reflectance difference spectroscopy, APPL PHYS L, 74(24), 1999, pp. 3663-3665
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
24
Year of publication
1999
Pages
3663 - 3665
Database
ISI
SICI code
0003-6951(19990614)74:24<3663:ZGISPB>2.0.ZU;2-5
Abstract
Time-resolved reflectance difference spectroscopy (TRDS) has been applied t o study the dynamics and relaxation processes of the 2.7 eV ZnSe/GaAs inter face state associated with Zn-As bonds. The instantaneous screening due to the photoexcited carriers and similar to 18 ps recovery time of the 2.7 eV interface state is observed in the TRDS spectra. The rapid cooling of the h ot carrier in the spectral region above the ZnSe band edge is also observed . (c) 1999 American Institute of Physics. [S0003-6951(99)01124-9].